Band gap engineering of graphene through quantum confinement and edge distortions

Based on the density functional theory approach we explore the chances endured by energy gap (EG) of semiconducting (armchair) graphene nanoribbons (AGNRs) when Stone-Wales (SW) defects are placed inside their lattices. Our results show that the AGNRs, which belong to the (Formula presented.) family...

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Hlavní autor: Stashans, A. (author)
Další autoři: Gomez, C. (author), Villamagua Conza, L. (author), Carini, M. (author)
Médium: article
Vydáno: 2016
Témata:
On-line přístup:http://dspace.utpl.edu.ec/handle/123456789/18812
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author Stashans, A.
author2 Gomez, C.
Villamagua Conza, L.
Carini, M.
author2_role author
author
author
author_facet Stashans, A.
Gomez, C.
Villamagua Conza, L.
Carini, M.
author_role author
collection Repositorio Universidad Técnica Particular de Loja
dc.creator.none.fl_str_mv Stashans, A.
Gomez, C.
Villamagua Conza, L.
Carini, M.
dc.date.none.fl_str_mv 2016-05-06
2017-06-16T22:02:25Z
2017-06-16T22:02:25Z
dc.identifier.none.fl_str_mv 10.1007/s11587-016-0278-8
355038
10.1007/s11587-016-0278-8
http://dspace.utpl.edu.ec/handle/123456789/18812
dc.language.none.fl_str_mv Inglés
dc.publisher.none.fl_str_mv Ricerche di Matematica
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
dc.source.none.fl_str_mv reponame:Repositorio Universidad Técnica Particular de Loja
instname:Universidad Técnica Particular de Loja
instacron:UTPL
dc.subject.none.fl_str_mv Density functional theory
dc.title.none.fl_str_mv Band gap engineering of graphene through quantum confinement and edge distortions
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
description Based on the density functional theory approach we explore the chances endured by energy gap (EG) of semiconducting (armchair) graphene nanoribbons (AGNRs) when Stone-Wales (SW) defects are placed inside their lattices. Our results show that the AGNRs, which belong to the (Formula presented.) family experience an increase in their EG value. On the other hand, those belonging to 3m and (Formula presented.) families experience decrease in their EG. The maximum observed EG for pristine and distorted ribbons were (Formula presented.)2.6 and (Formula presented.)1.6 eV, respectively. Our results can be useful to understand the semiconducting properties of wider graphene nanoribbons which are already available experimentally.
eu_rights_str_mv openAccess
format article
id UTPL_0ad61ef75706b4bd3ce8e957597edf08
identifier_str_mv 10.1007/s11587-016-0278-8
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instacron_str UTPL
institution UTPL
instname_str Universidad Técnica Particular de Loja
language_invalid_str_mv Inglés
network_acronym_str UTPL
network_name_str Repositorio Universidad Técnica Particular de Loja
oai_identifier_str oai:dspace.utpl.edu.ec:123456789/18812
publishDate 2016
publisher.none.fl_str_mv Ricerche di Matematica
reponame_str Repositorio Universidad Técnica Particular de Loja
repository.mail.fl_str_mv .
repository.name.fl_str_mv Repositorio Universidad Técnica Particular de Loja - Universidad Técnica Particular de Loja
repository_id_str 1227
spelling Band gap engineering of graphene through quantum confinement and edge distortionsStashans, A.Gomez, C.Villamagua Conza, L.Carini, M.Density functional theoryBased on the density functional theory approach we explore the chances endured by energy gap (EG) of semiconducting (armchair) graphene nanoribbons (AGNRs) when Stone-Wales (SW) defects are placed inside their lattices. Our results show that the AGNRs, which belong to the (Formula presented.) family experience an increase in their EG value. On the other hand, those belonging to 3m and (Formula presented.) families experience decrease in their EG. The maximum observed EG for pristine and distorted ribbons were (Formula presented.)2.6 and (Formula presented.)1.6 eV, respectively. Our results can be useful to understand the semiconducting properties of wider graphene nanoribbons which are already available experimentally.Ricerche di Matematica2017-06-16T22:02:25Z2017-06-16T22:02:25Z2016-05-06info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10.1007/s11587-016-0278-835503810.1007/s11587-016-0278-8http://dspace.utpl.edu.ec/handle/123456789/18812Inglésinfo:eu-repo/semantics/openAccessreponame:Repositorio Universidad Técnica Particular de Lojainstname:Universidad Técnica Particular de Lojainstacron:UTPL2017-06-16T22:02:25Zoai:dspace.utpl.edu.ec:123456789/18812Institucionalhttps://dspace.utpl.edu.ec/Institución privadahttps://www.utpl.edu.ec/https://dspace.utpl.edu.ec/oai.Ecuador...opendoar:12272017-06-16T22:02:25Repositorio Universidad Técnica Particular de Loja - Universidad Técnica Particular de Lojafalse
spellingShingle Band gap engineering of graphene through quantum confinement and edge distortions
Stashans, A.
Density functional theory
status_str publishedVersion
title Band gap engineering of graphene through quantum confinement and edge distortions
title_full Band gap engineering of graphene through quantum confinement and edge distortions
title_fullStr Band gap engineering of graphene through quantum confinement and edge distortions
title_full_unstemmed Band gap engineering of graphene through quantum confinement and edge distortions
title_short Band gap engineering of graphene through quantum confinement and edge distortions
title_sort Band gap engineering of graphene through quantum confinement and edge distortions
topic Density functional theory
url http://dspace.utpl.edu.ec/handle/123456789/18812