Schottky defects in cubic lattice of SrTiO3

Structural and electronic properties produced by formation of Schottky defects in cubic structure of SrTiO3 crystal are investigated by means of a quantum-chemical simulation based on the Hartree-Fock methodology. The occurrence of Sr partial Schottky defect (VSr+VO) and two types of Ti partial Scho...

Full description

Saved in:
Bibliographic Details
Main Author: Stashans, A. (author)
Other Authors: Villamagua Conza, L. (author)
Format: article
Published: 2008
Subjects:
Online Access:http://dspace.utpl.edu.ec/handle/123456789/19295
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1863437815768940544
author Stashans, A.
author2 Villamagua Conza, L.
author2_role author
author_facet Stashans, A.
Villamagua Conza, L.
author_role author
collection Repositorio Universidad Técnica Particular de Loja
dc.creator.none.fl_str_mv Stashans, A.
Villamagua Conza, L.
dc.date.none.fl_str_mv 07/12/2008
2008-11-13
2009-02-01
2017-06-16T22:03:18Z
2017-06-16T22:03:18Z
dc.identifier.none.fl_str_mv 10.1016/j.jpcs.2008.11.020
223697
10.1016/j.jpcs.2008.11.020
http://dspace.utpl.edu.ec/handle/123456789/19295
dc.language.none.fl_str_mv Inglés
dc.publisher.none.fl_str_mv Journal of Physics and Chemistry of Solids
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
dc.source.none.fl_str_mv reponame:Repositorio Universidad Técnica Particular de Loja
instname:Universidad Técnica Particular de Loja
instacron:UTPL
dc.subject.none.fl_str_mv A. Oxides
dc.title.none.fl_str_mv Schottky defects in cubic lattice of SrTiO3
dc.type.none.fl_str_mv info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
description Structural and electronic properties produced by formation of Schottky defects in cubic structure of SrTiO3 crystal are investigated by means of a quantum-chemical simulation based on the Hartree-Fock methodology. The occurrence of Sr partial Schottky defect (VSr+VO) and two types of Ti partial Schottky defects (VTi+2VO) is modeled using a supercell containing 135 atoms. Vacancy-induced changes in the positions of their neighboring atoms are analyzed in light of the computed electron density redistribution in the defective region of supercell. The observed local one-electron energy levels in the gap between the upper valence band and the conduction band can be attributed to the presence of anion and cation vacancies. © 2008 Elsevier Ltd. All rights reserved.
eu_rights_str_mv openAccess
format article
id UTPL_3358f64e37046df64a55e42b86d42332
identifier_str_mv 10.1016/j.jpcs.2008.11.020
223697
instacron_str UTPL
institution UTPL
instname_str Universidad Técnica Particular de Loja
language_invalid_str_mv Inglés
network_acronym_str UTPL
network_name_str Repositorio Universidad Técnica Particular de Loja
oai_identifier_str oai:dspace.utpl.edu.ec:123456789/19295
publishDate 2008
publisher.none.fl_str_mv Journal of Physics and Chemistry of Solids
reponame_str Repositorio Universidad Técnica Particular de Loja
repository.mail.fl_str_mv .
repository.name.fl_str_mv Repositorio Universidad Técnica Particular de Loja - Universidad Técnica Particular de Loja
repository_id_str 1227
spelling Schottky defects in cubic lattice of SrTiO3Stashans, A.Villamagua Conza, L.A. OxidesStructural and electronic properties produced by formation of Schottky defects in cubic structure of SrTiO3 crystal are investigated by means of a quantum-chemical simulation based on the Hartree-Fock methodology. The occurrence of Sr partial Schottky defect (VSr+VO) and two types of Ti partial Schottky defects (VTi+2VO) is modeled using a supercell containing 135 atoms. Vacancy-induced changes in the positions of their neighboring atoms are analyzed in light of the computed electron density redistribution in the defective region of supercell. The observed local one-electron energy levels in the gap between the upper valence band and the conduction band can be attributed to the presence of anion and cation vacancies. © 2008 Elsevier Ltd. All rights reserved.Journal of Physics and Chemistry of Solids2017-06-16T22:03:18Z2008-11-132017-06-16T22:03:18Z2009-02-0107/12/2008info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article10.1016/j.jpcs.2008.11.02022369710.1016/j.jpcs.2008.11.020http://dspace.utpl.edu.ec/handle/123456789/19295Inglésinfo:eu-repo/semantics/openAccessreponame:Repositorio Universidad Técnica Particular de Lojainstname:Universidad Técnica Particular de Lojainstacron:UTPL2017-06-16T22:03:18Zoai:dspace.utpl.edu.ec:123456789/19295Institucionalhttps://dspace.utpl.edu.ec/Institución privadahttps://www.utpl.edu.ec/https://dspace.utpl.edu.ec/oai.Ecuador...opendoar:12272017-06-16T22:03:18Repositorio Universidad Técnica Particular de Loja - Universidad Técnica Particular de Lojafalse
spellingShingle Schottky defects in cubic lattice of SrTiO3
Stashans, A.
A. Oxides
status_str publishedVersion
title Schottky defects in cubic lattice of SrTiO3
title_full Schottky defects in cubic lattice of SrTiO3
title_fullStr Schottky defects in cubic lattice of SrTiO3
title_full_unstemmed Schottky defects in cubic lattice of SrTiO3
title_short Schottky defects in cubic lattice of SrTiO3
title_sort Schottky defects in cubic lattice of SrTiO3
topic A. Oxides
url http://dspace.utpl.edu.ec/handle/123456789/19295