H-doped PbTiO3: Structure and electronic properties
The geometry and electronic properties of the interstitial H atom in the tetragonal PbTiO3 crystal have been studied using an advanced quantum chemical computer code developed for the modeling of crystals. The inserted H atom was found to bind to one of the O atoms and to form the hydroxyl, O - H gr...
Na minha lista:
| Autor principal: | Stashans, A. (author) |
|---|---|
| Outros Autores: | Rivera Escobar, R. (author) |
| Formato: | article |
| Publicado em: |
2006
|
| Assuntos: | |
| Acesso em linha: | http://dspace.utpl.edu.ec/handle/123456789/19291 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|
Registos relacionados
-
Electronic properties of Cr-, B-doped and codoped SrTiO3
Por: Stashans, A.
Publicado em: (2017) -
A quantum-chemical study of oxygen-vacancy defects in PbTiO3 crystals
Por: Stashans, A.
Publicado em: (2006) -
Local structure, magnetic and electronic properties of N-doped alpha-Cr2O3 from the first-principles
Por: Stashans, A.
Publicado em: (2017) -
Al-doped ZnO: Electronic, electrical and structural properties
Por: Maldonado, F.
Publicado em: (2010) -
A quantum mechanical study of La-doped Pb(Zr,Ti)O-3
Por: Stashans, A.
Publicado em: (2006)