Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattic...

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書誌詳細
第一著者:	Stashans, A. (author)
その他の著者:	Villamagua Conza, L. (author)
フォーマット:	article
出版事項:	2016
主題:	SnO2 H-doping DFT
オンライン･アクセス:	http://dspace.utpl.edu.ec/handle/123456789/18727
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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