Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity
We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattic...
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| Muut tekijät: | |
| Aineistotyyppi: | article |
| Julkaistu: |
2016
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| Linkit: | http://dspace.utpl.edu.ec/handle/123456789/18727 |
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