Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattic...

• מחבר ראשי: Stashans, A. (author)
• מחברים אחרים: Villamagua Conza, L. (author)
• פורמט: article
• יצא לאור: 2016
• נושאים: SnO2; H-doping; DFT
• גישה מקוונת: http://dspace.utpl.edu.ec/handle/123456789/18727