Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattic...

• Հիմնական հեղինակ: Stashans, A. (author)
• Այլ հեղինակներ: Villamagua Conza, L. (author)
• Ձևաչափ: article
• Հրապարակվել է: 2016
• Խորագրեր: SnO2; H-doping; DFT
• Առցանց հասանելիություն: http://dspace.utpl.edu.ec/handle/123456789/18727