Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity
We propose an explanation for the origin of n-type electrical conductivity in SnO2 based on the results obtained from the DFT+U simulations. Two competitive intrinsic point defects, namely oxygen vacancy and hydrogen impurity, have been considered at different positions within the crystalline lattic...
Furkejuvvon:
| Váldodahkki: | |
|---|---|
| Eará dahkkit: | |
| Materiálatiipa: | article |
| Almmustuhtton: |
2016
|
| Fáttát: | |
| Liŋkkat: | http://dspace.utpl.edu.ec/handle/123456789/18727 |
| Fáddágilkorat: |
Lasit fáddágilkoriid
Eai fáddágilkorat, Lasit vuosttaš fáddágilkora!
|
Lasit fáddágilkoriid