Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

In this study, the Al3+-Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+-Sn4+ and N3--O2- substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP...

• Autor principal: Cheng-Yi, L. (author)
• Altres autors: Villamagua Conza, L. (author), Carini, M. (author), Liu, Y. (author), Lee, P. (author), Stashans, A. (author)
• Format: article
• Publicat: 2016
• Matèries: Aluminum nitride; Annealing; Doping (additives); Photoelectron spectroscopy; Semiconductor doping; Spectrum analysis; Substitution reactions; Thin films; Tin; Tin oxides; Valence bands; X ray photoelectron spectroscopy
• Accés en línia: http://dspace.utpl.edu.ec/handle/123456789/18811