Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

In this study, the Al3+-Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+-Sn4+ and N3--O2- substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP...

Повний опис

Збережено в:
Бібліографічні деталі
Автор: Cheng-Yi, L. (author)
Інші автори: Villamagua Conza, L. (author), Carini, M. (author), Liu, Y. (author), Lee, P. (author), Stashans, A. (author)
Формат: article
Опубліковано: 2016
Предмети:
Aluminum nitride
Annealing
Doping (additives)
Photoelectron spectroscopy
Semiconductor doping
Spectrum analysis
Substitution reactions
Thin films
Tin
Tin oxides
Valence bands
X ray photoelectron spectroscopy
Онлайн доступ:http://dspace.utpl.edu.ec/handle/123456789/18811
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Інтернет

http://dspace.utpl.edu.ec/handle/123456789/18811

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