Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

In this study, the Al3+-Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+-Sn4+ and N3--O2- substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP...

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Bibliografiske detaljer
Hovedforfatter:	Cheng-Yi, L. (author)
Andre forfattere:	Villamagua Conza, L. (author), Carini, M. (author), Liu, Y. (author), Lee, P. (author), Stashans, A. (author)
Format:	article
Udgivet:	2016
Fag:	Aluminum nitride Annealing Doping (additives) Photoelectron spectroscopy Semiconductor doping Spectrum analysis Substitution reactions Thin films Tin Tin oxides Valence bands X ray photoelectron spectroscopy
Online adgang:	http://dspace.utpl.edu.ec/handle/123456789/18811
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