Si-Ncs embedded in Sio2 matrix, (n+ -n) for quantum dots solar cells applications: optical and electrical characterization

Description: In this paper we present a n+-n- multi-junction quantum Dots samples fabricated by PECVD, alternating bilayers of SiOx and SiO2 (1 nm) on top of n-type Si substrates and submitted to a post annealing treatment to precipitate the silicon excess into Si-NCs. The samples have three different thicknesses of the SiOx layers (2.5 nm, 3.5 nm and 4.5 nm), it development a program in MATLAB to obtain the data automatically, this program integrates two system; B1500A semiconductor device parameter analyzer and a PVE-300 photovoltaic system. Also the optical properties of Si-NCs were analyzed by means of photoluminescence and electro-optical properties were analyzed by data acquisition system developed in this work.

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